Chemical-Mechanical Polishing (CMP) is a technology that uses the synergistic effect of chemical reaction and mechanical removal to achieve surface smoothness.

The chemical mechanical polishing system is mainly composed of three parts: polishing liquid, polishing pad and polishing head. The polishing liquid mainly includes abrasive particles, pH regulator and surfactant. CeO2 abrasive particles are widely used in the field of chemical mechanical polishing due to their unique properties: high hardness, maximum grinding amount of SiO2, reaching 84.2 mg; chemical tooth effect; in addition, they also have redox properties and are easy to convert between Ce3+ and Ce4+.

The polishing performance of CeO2 polishing liquid is affected by its dispersion and suspension stability, which causes the abrasive to be unable to maintain consistency and activity during the polishing process, thus affecting the final polishing effect. The uniformity of abrasive particle size is the basis for ensuring polishing quality.

Cerium oxide polishing powder and polishing liquid are the superior product of Suzhou KP Chemical Co., Ltd. We can provide these products with different particle size D50: 0.1um-5.0um. Please contact info@szkpchem.com or 086-18915544907.