Hafnium Oxide HfO2 CAS 12055-23-1 For Hafnium Metal And Coating Materials
tellurium dioxide
,hafnium oxide
Hafnium Oxide HfO2 CAS 12055-23-1 For Hafnium Metal And Coating Materials
Name: Hafnium oxide Molecular formula: HfO2
CAS: 12055-23-1 Molecular weight: 210.49
Description: Hafnium oxide is a white powder with monoclinic, tetragonal and cubic crystal structures, insoluble in water, hydrochloric acid and nitric acid, soluble in concentrated sulfuric acid and hydrofluoric acid. Hafnium sulfate [HF(SO4)2] is formed by reacting with hot concentrated sulfuric acid or acid sulfate. After mixing with carbon, hafnium tetrachloride (HfCl4) is formed by heating and chlorinating, and potassium fluosilicate is formed by reacting with potassium fluosilicate to form potassium fluohafnate (K2HfF6). Hafnium oxide can be prepared by thermal decomposition or hydrolysis of hafnium sulfate, hafnium oxychloride and other compounds.
Specification:
| Name | HfO2_99.9 | HfO2_99.5 | |||
| Molecular formula | HfO2 | HfO2 | |||
| CAS | 12055-23-1 | 12055-23-1 | |||
| HfO2 | %wt | ≥99.9 | ≥99.5 | ||
| Impurity content | Fe2O3 | %wt | ≤0.003 | ≤0.010 | |
| SiO2 | %wt | ≤0.005 | ≤0.020 | ||
| Al2O3 | %wt | ≤0.005 | ≤0.010 | ||
| MgO | %wt | ≤0.003 | ≤0.010 | ||
| CaO | %wt | ≤0.002 | ≤0.010 | ||
| TiO2 | %wt | ≤0.001 | ≤0.010 | ||
| Na2O | %wt | ≤0.001 | ≤0.010 | ||
| LOI | % | ≤0.30 | ≤0.40 | ||
| property | White powder | ||||
| Application | For the production of hafnium and hafnium alloy raw materials. It is used as coating material, refractory, anti radioactive coating and catalyst. | ||||
| package | Conventional packaging, flexible packaging according to customer needs | ||||
Packing: 25 kg in plastic bucket, also provide small package: 100g, 500g, and other small packages
Uses: Hafnium oxide is the raw material for the production of metal hafnium and hafnium alloy. It is used as coating material, refractory, anti radioactive coating and catalyst. Hafnium dioxide is a kind of ceramic material with wide band gap and high dielectric constant. Recently, it has attracted great attention in the industry, especially in the field of microelectronics. Because it is most likely to replace the gate insulator silicon dioxide (SiO2) of metal oxide semiconductor field effect transistor (MOSFET), the core device of silicon-based integrated circuit, to solve the size of the development of traditional SiO2 / Si structure in MOSFET Limit problem.
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